1996. 1. 28 1/3 semiconductor technical data KN3904 epitaxial planar npn transistor revision no : 0 general purpose application. switching application. features low leakage current : i cex =50na(max.), @v ce =30v, v eb =3v. low saturation voltage : v ce(sat) =0.3v(max.) @i c =50ma, i b =5ma. complementary to kn3906. maximum rating (ta=25 1 ) to-92 dim millimeters a b c d f g h j k l 4.70 max 4.80 max 3.70 max 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 max 2.30 d 1 2 3 b a j k g h f f l e c e c m n 0.45 max m 1.00 n 1. emitter 3. collector 2. base + _ characteristic symbol rating unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 6 v collector current i c 200 ma base current i b 50 ma collector power dissipation p c 625 mw junction temperature t j 150 1 storage temperature range t stg -55 150 1
1996. 1. 28 2/3 revision no : 0 electrical characteristics (ta=25 1 ) KN3904 * pulse test : pulse width # 300 s, duty cycle # 2%. characteristic symbol test condition min. typ. max. unit collector cut-off current i cex v ce =30v, v eb =3v - - 50 na collector-base breakdown voltage v (br)cbo i c =10 a, i e =0 60 - - v collector-emitter breakdown voltage * v (br)ceo i c =1ma, i b =0 40 - - v emitter-base breakdown voltage v (br)ebo i e =10 a, i c =0 6 - - v dc current gain * h fe (1) v ce =1v, i c =0.1ma 40 - - h fe (2) v ce =1v, i c =1ma 70 - - h fe (3) v ce =1v, i c =10ma 100 - 300 h fe (4) v ce =1v, i c =50ma 60 - - h fe (5) v ce =1v, i c =100ma 30 - - collector-emitter saturation voltage * v ce(sat) 1 i c =10ma, i b =1ma - - 0.2 v v ce(sat) 2 i c =50ma, i b =5ma - - 0.3 base-emitter saturation voltage * v be(sat) 1 i c =10ma, i b =1ma 0.65 - 0.85 v v be(sat) 2 i c =50ma, i b =5ma - - 0.95 transition frequency f t v ce =20v, i c =10ma, f=100mhz - 300 - mhz collector output capacitance c ob v cb =5v, i e =0, f=1mhz - - 4.0 pf
1996. 1. 28 3/3 KN3904 revision no : 0 capacitance c (pf) 0 ob 30 10 3 1 collector-base voltage v (v) cb c - v h - i c collector current i (ma) 0.1 0.3 1 3 fe dc current gain h 0 collector current i (ma) saturation voltage 0.3 0.1 be(sat) 3 1 c v ,v - i fe c 30 100 10 ce v =1v be(sat) ce(sat) c v ,v (v) ce(sat) 10 30 100 0.01 0.03 0.05 0.1 0.3 0.5 1 3 5 10 v be(sat) ce(sat) v ob cb 100 200 i /i =10 c b 1 2 3 4 5 i =0 f=1mhz e 40 80 120 160 200 240 collector power dissipation 0 c 0 ambient temperature ta ( c) pc - ta p (mw) 25 50 75 100 125 150 175 100 200 300 400 500 600 700
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